feb.1999 bup eup bvp evp bwpewp bun eun bvn evn bwn ewn p n uvw p n 10 102 0.5 6146146 17 4 f 5.5 7?4 74?.25 8.5 17 30 12 24.5 27 30 43 16.5 91 ?.5 22 20 20 22 2 80 0.25 11 30 +1.5 ?.5 29.5 7 label tab#110, t=0.5 8.1 p n bup eup bun eun u bvp evp bvn evn v bwp ewp bwn ewn w p n outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM50TB-2HB ? i c collector current .......................... 50a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 mitsubishi transistor modules QM50TB-2HB medium power switching use insulated type note: all transistor units are 4-stage darlingtons.
feb.1999 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight ratings 1000 1000 1000 7 50 50 400 3 500 C40~+150 C40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m4 mounting screw m5 typical value absolute maximum ratings (tj=25 c, unless otherwise noted) unit v v v v a a w a a c c v nm kgcm nm kgcm g mitsubishi transistor modules QM50TB-2HB medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =67ma Ci c =50a (diode forward voltage) i c =50a, v ce =4.0v v cc =600v, i c =50a, i b1 =0.1ma, i b2 =C1.0a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 2.0 2.0 50 4.0 4.0 1.8 2.5 15 3.0 0.31 1.2 0.2
feb.1999 1 10 0 10 ? 10 ? 10 ? 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.8 3.2 3.6 4.0 4.4 4.8 v ce =4v t j =25? 100 80 60 40 20 0 01 23 4 5 t j =25? i b =400ma i b =200ma i b =67ma i b =20ma i b =10ma 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 0 10 23457 1 10 23457 2 10 v ce =4v t j =25? t j =125? v ce =10v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 v ce(sat) v be(sat) t j =25? t j =125? i b =67ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 t j =25? t j =125? i c =30a i c =50a 1 10 7 5 4 3 2 0 10 7 5 4 3 345 7 2 3457 2 10 3 2 23 t j =25? t j =125? t f t on t s v cc =600v i b1 =100ma ? b2 =1a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM50TB-2HB medium power switching use insulated type
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 200 400 600 800 1000 t j =125? i b2 =?a 1 10 7 5 4 3 2 ? 10 23457 0 10 23457 1 10 0 10 7 5 4 3 3 2 t j =25? t j =125? t s t f v cc =600v i c =50a i b1 =100ma 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 50 s dc 1m s 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 444 23457 0.2 3 2 457 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM50TB-2HB medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 ? 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 0 10 23457 1 10 23457 2 10 v cc =600v i b1 =100ma ? b2 =1a t j =125? t j =25? i rr t rr q rr 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 444 23457 3 2 5 4 1.8 1.4 1.0 0.6 0.2 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM50TB-2HB medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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